name |
description |
default |
L |
Default channel length |
3.0e-6
|
W |
Default channel width |
3.0e-6
|
LD |
Lateral diffusion |
0
|
WD |
Field-oxide encroachment |
0
|
LDIF |
Lateral diffusion beyond the gate |
0
|
XL |
Length variation due to masking and etching |
0
|
XW |
Width variation due to masking and etching |
0
|
RD |
Drain resistance |
0
|
RS |
Source resistance |
0
|
RSS |
Scalable source resistance |
0
|
RDD |
Scalable drain resistance |
0
|
RSH |
Source/drain diffusion sheet resistance |
0
|
TRD |
Temperature parameter for drain resistance |
0
|
TRS |
Temperature parameter for source resistance |
0
|
RDC |
Drain contact resistance |
0
|
RSC |
Source contact resistance |
0
|
NRD |
Default number of squares of drain diffusion |
0
|
NRS |
Default number of squares of source diffusion |
0
|
CBD |
Bulk-drain zero-bias junction capacitance |
0
|
CBS |
Bulk-source zero-bias junction capacitance |
0
|
CGSO |
Gate-source overlap capacitance |
0
|
CGDO |
Gate-drain overlap capacitance |
0
|
CGBO |
Gate-bulk overlap capacitance |
0
|
FC |
Forward-bias depletion capacitance threshold |
0.5
|
FCSW |
Side-wall forward-bias depletion capacitance threshold |
0.5
|
N |
Junction emission coefficient |
1
|
PB |
Bulk junction built-in potential |
0.8
|
MJ |
Bulk junction bottom grading coefficient |
0.5
|
PBSW |
Side-wall junction built-in potential |
0.8
|
MJSW |
Bulk junction sidewall grading coefficient |
0.33333333333333333333333
|
PS |
Default perimeter of source diffusion |
0
|
PD |
Default perimeter of drain diffusion |
0
|
AS |
Default area of source diffusion |
0
|
AD |
Default area of drain diffusion |
0
|
CJ |
Zero-bias junction bottom capacitance density |
0
|
CJSW |
Zero-bias junction sidewall capacitance density |
0
|
TT |
Bulk junction transit time |
0
|
IS |
Bulk junction reverse saturation current |
1e-14
|
JS |
Bulk junction reverse saturation current density |
0
|
IMAX |
|
0
|
JSSW |
Bulk junction saturation current per length of sidewall area |
0
|
NSUB |
Channel doping concentration |
-
99
|
TOX |
Gate oxide thickness |
1.0e-7
|
UO |
Carrier surface mobility |
600.0
|
KP |
Transconductance parameter |
2.0718e-5
|
PHI |
Surface potential at strong inversion |
-
99
|
NSS |
Surface state density |
0
|
NFS |
Fast surface state density |
0
|
UTE |
Mobility temperature exponent |
-
1.5
|
TRISE |
Temperature rise from ambient |
0
|
TNOM |
Parameters measurement temperature |
300.15
|
EG |
Energy band gap |
1.12452
|
GAP1 |
Band gap temperature coefficient |
7.02e-4
|
GAP2 |
Band gap temperature offset |
1108
|
TLEV |
DC temperature selector |
0
|
TLEVC |
AC temperature selector |
0
|
PTC |
Surface potential temperature coefficient |
0
|
TPG |
Type of gate (+1 = opposite of substate,-1 = same as substate, 0 = aluminum) |
1
|
SC |
Spacing between contacts |
-
1
|
PTA |
Junction potential temperature coefficient |
0
|
PTP |
Sidewall junction potential temperature coefficient |
0
|
LAMEX |
Temperature parameter for `lambda' and `kappa' |
0
|
TCV |
Threshold voltage temperature coefficient |
0
|
PHITEMPCOEF |
Surface potential temperature coefficient |
0
|
MOBTEMPOFF |
Mobility temperature offset |
0
|
MOBTEMPEXP |
Mobility temperature exponent |
-
1.5
|
VTOTEMPCOEF |
Threshold voltage temperature coefficient |
0
|
GENDER |
- |
-
1
|
LAMBDA |
Channel length modulation parameter |
0.0
|
GAMMA |
Body-effect parameter |
-
99
|
VTO |
Threshold voltage at zero body bias |
-
99
|